High-Power Quasi-vertical GaN Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications
Authors: Yu, X., Lin, Y.-X., Zhou, J., Yen, T.-J., Mitrovic, I.Z., Huang, Y., He, Y. and Song, C.
Journal: 2025 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM-IMS 2025
Pages: 178-181
eISSN: 2576-7216
ISBN: 979-8-3315-1410-5
ISSN: 0149-645X
DOI: 10.1109/IMS40360.2025.11103933
Source: Web of Science (Lite)