FAPbBr<inf>3</inf> perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells
Authors: Rwaimi, M., Bailey, C.G., Shaw, P.J., Mercier, T.M., Krishnan, C., Rahman, T., Lagoudakis, P.G., Horng, R.H., Boden, S.A. and Charlton, M.D.B.
Journal: Solar Energy Materials and Solar Cells
Volume: 234
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2021.111406
Abstract:Solar cells based on GaAs often include a wide-bandgap semiconductor as a window layer to improve surface passivation. Such devices often have poor photon-to-electron conversion efficiency at higher photon energies due to parasitic absorption. In this article, we deposit FAPbBr3 perovskite quantum dots on the AlInP window layer of a GaAs thin-film solar cell to improve the external quantum efficiency (EQE) across its entire absorption range, resulting in an 18% relative enhancement of the short-circuit current density. Luminescent downshifting from the quantum dots to the GaAs device contributes to a large effective enhancement of the internal quantum efficiency (IQE) at shorter wavelengths. Additionally, improved surface passivation of the window layer results in a 14–16% broadband increase of the IQE. These mechanisms combined with increased overall photon collection (antireflective effects) results in a doubling of the EQE in the ultraviolet region of the solar spectrum. Our results show a promising application of perovskite nanocrystals to improve the performance of well-established thin-film solar cell technologies.
Source: Scopus
FAPbBr3 perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells
Authors: Rwaimi, M., Bailey, C.G., Shaw, P.J., Mercier, T.M., Krishnan, C., Rahman, T., Lagoudakis, P.G., Horng, R.-H., Boden, S.A. and Charlton, M.D.B.
Journal: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 234
eISSN: 1879-3398
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2021.111406
Source: Web of Science (Lite)