Silicon-Based Monolithic Quantum-Dot Distributed Feedback Laser with Laterally Coupled Gratings

Authors: Yang, B., Han, D., Wei, W., Cui, X., Wang, Z., Wang, T. and Zhang, J.

Journal: Proceedings of SPIE the International Society for Optical Engineering

Volume: 13712

eISSN: 1996-756X

ISSN: 0277-786X

DOI: 10.1117/12.3076008

Abstract:

The direct epitaxy of q¹uantum dot (QD) lasers on silicon was considered as holy grail of integrated silicon photonics. With demonstration of various InAs/GaAs QD lasers directly grown on silicon substrates, there are limited research carried on single longitudinal mode lasers on silicon. Here, to avoid any regrowth procedures, distributed feedback (DFB) QD lasers on silicon are fabricated with lateral coupled (LC) gratings via simplified fabrication process. The LC-DFB laser has a maximum laser power of 4.2 mW and threshold current of 80 mA under continuous-wave current mode at room temperature. Under injection current of 110 mA, the side mode suppression ratio (SMSR) reaches 50 dB at room temperature. The RIN of the laser is measured with value of -135dB/Hz with corresponding optical linewidth of 3.5 MHz.

Source: Scopus