Mid-Wave Infrared InAsSb Barrier Detectors Monolithically Grown on Silicon

Authors: Cheng, K., Han, D., Ji, W., Yan, K., Li, C., Shen, K., Wang, T., Zhang, J., Wu, J.

Journal: IEEE Electron Device Letters

Publication Date: 01/08/2026

Volume: 47

Issue: 8

Pages: 1543-1546

eISSN: 1558-0563

ISSN: 0741-3106

DOI: 10.1109/LED.2026.3707297

Abstract:

Monolithic silicon integration provides a promising pathway toward low-cost, large-format infrared photodetectors despite substantial lattice mismatch. Here, mid-wave infrared InAsSb barrier detectors were monolithically grown on silicon via molecular beam epitaxy. To mitigate the effects of a high threading dislocation density caused by the 11% lattice mismatch, a unipolar barrier was employed to suppress defect-induced generation-recombination (G-R) current, thereby maintaining reliable device performance. Electrical measurements showed low dark current densities of 1.40 × 10^-7 and 1.75 × 10^-2 A/cm² at 77 and 300 K, respectively, under a bias of -0.2 V. Furthermore, the devices achieved a peak responsivity of 0.75 A/W and a quantum efficiency (QE) of 26.6% at 3.5μm. These metrics validate the effectiveness of the barrier architecture in neutralizing the deleterious impact of threading dislocations, confirming that band engineering provides superior defect tolerance for antimonide-based infrared sensing on CMOS-compatible platforms.

Source: Scopus