Controllable Ge Hut Wires With Mobilities Exceeding 20 000 cm2 V−1 s−1

Authors: Ming, M., Wang, J.H., Zhang, J.Y., Huang, D.M., Han, D., Wang, T., Teng, J., Zhang, J.J.

Journal: Advanced Electronic Materials

Publication Date: 01/01/2026

eISSN: 2199-160X

DOI: 10.1002/aelm.70485

Abstract:

The controlled growth of high-mobility semiconductor nanowires is essential for advancing high-performance electrical and quantum devices. Here, site-controlled growth of Ge hut wires with record mobility is achieved on pre-patterned SiGe/Si (001) virtual substrates. These Ge wires self-assemble into patterned trenches on strain-relaxed SiGe/Si(001) substrates at growth temperatures below 400°C. Transport measurements reveal a hole mobility up to 22 900 cm² V⁻¹ s⁻¹ at 4.2 K. Furthermore, conductance quantization is observed in Ge hut wire devices with a channel length of 1.9 µm. These controllable, high-mobility, low-disorder Ge wires on Si(001) pave the way for scalable high-performance quantum devices.

Source: Scopus